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mb r 2 0 2 0 c t t h r u mb r 2 0 2 0 0 c t schottky barrier rectifier reverse voltage - 20 to 200 volts forward current - 20amperes features mechanical data maximum ratings and electrical characteristics notes : 1.pulse test: 300 s pulse width,1% duty cycle (r atings at 25 c ambient temperature unless other wise specified ,single phase ,half wave ,resistive or inductive load. f or capacitive load,derate by 20%.) 2.thermal resistance from junction to case plastic pack age has under writers l aborator y flammability classification 94v -0 metal silicon junction ,majority carrier conduction guard ring for over voltage protection l ow power loss ,high efficiency high current capability ,l ow for ward voltage drop high surge capability f or use in low voltage ,high frequency inver ters, free wheeling ,and polarity protection applications dual rectifier construction high temperature soldering guaranteed:260 c/10 seconds,, 0.25"(6.35mm)from case component in accordance to r ohs 2002 / 95 / ec and weee 2002 / 96 / ec case : jedec to -220ab molded plastic body t erminals : l ead solderable per mil -std -750,method 2026 p olarity : as mark ed mounting p osition : any w eight : 0.08ounce, 2.24 grams dimensions in inches and (millimeters) maximum repetitive peak reverse voltage v rrm v olts v olts v olts v olts m a a mps a mps v rms v dc i (a v) i f sm t stg v f i r r jc maximum rms voltage maximum dc blocking voltage maximum instantaneous for ward voltage at 20.0 a t =25 c t =125 c c c t ypical thermal resistance (note 2) operating junction temperature range storage temperature range maximum instantaneous reverse current at rated dc blocking voltage(note 1) p eak for ward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) -65 to+150 -65 to+150 3 . 0 0.2 30 50 c/w c c t j 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 80 56 80 100 70 150 10.0 20.0 200.0 symbols units mbr 2020ct mbr 2030ct mbr 2040ct mbr 2050ct mbr 2060ct mbr 2080ct mbr 20100ct mbr 20150ct mbr 20200ct 150 105 200 140 200 100 0.60 0 . 9 0 0 . 7 5 0 . 8 5 0 . 9 5 t o-220ab 0.159(4.05) 0.105(2.67) 0.208(5.28) 0.037(0.94) 0.114(2.90) 0.161(4.10) 0.055(1.39) 0.185(4.70) 0.283(7.20) 0.560(14.22) 0.023(0.58) 0.138(3.50) 0.095(2.41) 0.192(4.88) 0.027(0.68) 0.102(2.60) 0.147(3.74) dia 0.045(1.14) 0.175(4.44) 0.244(6.20) 0.516(13.10) 0.014(0.35) 0.410(10.41) pin 0.390(9.91) 1 2 3 1.161(29.50) 1.106(28.10) 0.053(1.34) 0.047(1.20) 0.114(2.90) 0.098(2.50) maximum average for ward rectified current(see f ig.1) per leg t otal device xinghe electronics e?o?? gaomi xinghe electronics co.,ltd. www.sddzg.com 1 x h mbr2060ct
0.001 0.01 1 0.1 10 50 80 120 160 100 140 20 0 40 60 80 100 1 10 100 fig.1-forward current derating curve fig.2-maximum non-repetitive peak forward surge current fig.3-typical instantaneous forward characteristics fig.4-typical reverse characteristics i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a m p e r e s ) i n s t a n t a n e o u s r e v e r s e c u r r e n t ( m a ) p e a k f o r w a r d s u r g e c u r r e n t ( a m p e r e s ) instantaneous forward voltage (volts) reverse voltage. volts t, pulse duration ,sec. percent of rated peak reverse voltage% number of cycles at 60hz t j =t j max 8.3ms single half sine-wave (jedec method) t j =125 c t j =25 c t j =75 c 1 10 0.1 0.1 0.1 0.01 1 1 10 10 100 100 100 1000 4000 100 fig.5-typical junction capacitance fig.6-typical transient thermal impedance j u n c t i o n c a p a c i t a n c e ( p f ) t r a n s i e n t t h e r m a l i m p e d a n c e , c / w t j =25 c f=1.0mh z vsig=50mvp-p 0 50 100 150 0 4 12 8 20 16 a v e r a g e f o r w a r d c u r r e n t a m p e r e s lead temperature ( c) inductive or resistive load 0.01 0.1 1 50 10 0 0.2 0.1 0.3 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 pulse width=300 s 1% duty cycle t j =125 c t j =25 c 180 200 xinghe electronics e?o?? rating and characteristic curves mb r 2 0 2 0 c t t h r u mb r 2 0 2 0 0 c t gaomi xinghe electronics co.,ltd. www.sddzg.com 2

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